SEM silicon wafer substrates, Type P, 111

These silicon wafers can be used either as a substrate for thin film research or to make small silicon substrates by dicing the wafer into smaller pieces using a scriber and the Wafer Cleaving / Glass Breaking Pliers. The wafer is shipped in a wafer carrier.

Properties:

  • Orientation: <100> or <111> for 3" (76.2mm) wafer
  • Resistance: 1-30 Ohms
  • Type P: (Boron) (1 primary flat)
  • No SiO2 top coating
  • Wafer thickness:
    • 25.4mm diameter = 10 - 12 mill (254 - 304µm)
    • 50.8mm diameter = 9 - 13 mill (230-330µm)
    • 76.2mm diameter = 13.6 - 18.5 mill (345-470µm)
    • 101.6mm diameter = 18.7 - 22.6 mill (475-575µm)
    • 127mm diameter = 23.6 - 25.2 mill (600-690µm)
  • Roughness: 2nm
  • TTV: = <20um
  • Wafer is polished on one side
Updated: 23-02-2025
Code Title Size Pack Size Availability Price Updated: 23-02-2025
GAS02 SEM silicon wafer substrates, Type P, 111 50.8mm Each 3 weeks $68.00 AUD
GAS03 SEM silicon wafer substrates, Type P, 111 76.2mm Each 3 weeks $71.00 AUD
GAS04 SEM silicon wafer substrates, Type P, 111 101.6mm Each 3 weeks $93.00 AUD
GAS06 SEM silicon wafer substrates, Type P, 111 127mm Each 3 weeks $136.00 AUD
PEL16011 SEM silicon wafer substrates, Type P, 111 25.4mm Each 3 weeks $105.00 AUD

* Availability Explanation

X weeks – the estimated lead time, based on the average time taken previously to fill orders from this particular supplier. Lead times are from when we receive your order until when we fill your order. For delivery times, please see shipping information below.

In Stock – Plenty of stock on the shelf, ready to ship.

No ETA – our supplier has advised they cannot provide an accurate ETA. Generally there is some issue with supply, and it may be more than 6 months.