SEM silicon wafer substrates, Type P, 111

These silicon wafers can be used either as a substrate for thin film research or to make small silicon substrates by dicing the wafer into smaller pieces using a scriber and the Wafer Cleaving / Glass Breaking Pliers. The wafer is shipped in a wafer carrier.

Properties:

  • Orientation: <100> or <111> for 3" (76.2mm) wafer
  • Resistance: 1-30 Ohms
  • Type P: (Boron) (1 primary flat)
  • No SiO2 top coating
  • Wafer thickness:
    • 25.4mm diameter = 10 - 12 mill (254 - 304µm)
    • 50.8mm diameter = 9 - 13 mill (230-330µm)
    • 76.2mm diameter = 13.6 - 18.5 mill (345-470µm)
    • 101.6mm diameter = 18.7 - 22.6 mill (475-575µm)
    • 127mm diameter = 23.6 - 25.2 mill (600-690µm)
  • Roughness: 2nm
  • TTV: = <20um
  • Wafer is polished on one side
Code Title Size Pack Size Availability Price Updated: 23-07-2024
GAS02 SEM silicon wafer substrates, Type P, 111 50.8mm Each 3 weeks $73.00 AUD
GAS03 SEM silicon wafer substrates, Type P, 111 76.2mm Each 3 weeks $80.00 AUD
GAS04 SEM silicon wafer substrates, Type P, 111 101.6mm Each 3 weeks $101.00 AUD
GAS06 SEM silicon wafer substrates, Type P, 111 127mm Each 3 weeks $144.00 AUD
PEL16011 SEM silicon wafer substrates, Type P, 111 25.4mm Each 3 weeks $111.00 AUD