Ultra-flat thermal SiO2 wafers, 200nm, type <100>

The Ultra-Flat SiO2 substrates consist of a 200nm thermally grown amorphous SiO2 film on an ultra-flat silicon wafer. SiO2 is one of the most characterised materials and is widely used in semiconductor manufacturing, thin film research and as substrate for growing cells. It can be directly used as substrate for AFM and SEM imaging. The ultra-flat thermal silicon dioxide substrates are available in 6" wafer and conveniently diced 5 x 5mm, 5 x 7mm and 10 x 10mm chips. The 6" wafer is shipped in a 6" wafer carrier, the diced pieces are shipped in a Gel-Pak box. The special clean dicing process involves coating the wafer with photo resist before dicing and removing it after dicing which produces debris-free SiO2 substrates. All products are packed in class 10 clean room conditions.

Properties for thermal SiO2 substrates:

• Orientation: <100>
• Grade: Prime / CZ Virgin
• Resistance: 1-50 Ohm/cm
• Type: P / Dopant: Boron
• Wafer Thickness: 655-695um
• TTV: <= 7Micrometre / STIR: <= 1.0um
• Warp: <=40Micrometre / Bow: <= 40um
• Particles: <=20@>= 3.0um
• Front surface: Polished
• Back Surface: Etched
• Flat: 1 per SEMI Standard (flat length 57.5+/12.5mm)
• Film: 200nm +/- 5% Thermal Oxide (SiO2), amorphous
• Size: 6" (150mm) diameter wafer or 5x5mm, 5x7mm or 10x10mm diced chips
• Roughness: Typical 2-3