SEM silicon wafer substrates, Type P, 111

These silicon wafers can be used either as a substrate for thin film research or to make small silicon substrates by dicing the wafer into smaller pieces using a scriber and the Wafer Cleaving / Glass Breaking Pliers. The wafer is shipped in a wafer carrier.

Properties:

Orientation: <100> or <111> for 3" (76.2mm) wafer
Resistance: 1-30 Ohms
Type P: (Boron) (1 primary flat)
No SiO2 top coating
Wafer thickness:
- 25.4mm diameter = 10 - 12 mill (254 - 304µm)
- 50.8mm diameter = 9 - 13 mill (230-330um)
- 76.2mm diameter = 13.6 - 18.5 mill (345-470um)
- 101.6mm diameter = 18.7 - 22.6 mill (475-575um)
- 127mm diameter = 23.6 - 25.2 mill (600-690um)
Roughness: 2nm
TTV: = <20um
Wafer is polished on one side

Code	Title	Size	Pack Size	Availability	Price
GAS02	SEM silicon wafer substrates, Type P, 111	50.8mm	Each	3 weeks	$73.00 AUD

GAS03	SEM silicon wafer substrates, Type P, 111	76.2mm	Each	3 weeks	$80.00 AUD

GAS04	SEM silicon wafer substrates, Type P, 111	101.6mm	Each	3 weeks	$101.00 AUD

GAS06	SEM silicon wafer substrates, Type P, 111	127mm	Each	3 weeks	$144.00 AUD

PEL16011	SEM silicon wafer substrates, Type P, 111	25.4mm	Each	3 weeks	$111.00 AUD